GATE OXIDE INTEGRITY AND MINORITY-CARRIER LIFETIME CORRELATED WITH SI WAFER POLISH DAMAGE

被引：3

作者：

LEE, J

WONG, CCD

TUNG, CY

SMITH, WL

HAHN, S

ARST, M

机构：

[1] THERMA WAVE INC,FREMONT,CA 94539

[2] SILTEC CORP,MT VIEW,CA 94043

[3] SIGNET CORP,SUNNYVALE,CA 94086

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 01期

关键词：

D O I：

10.1063/1.98885

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：54 / 56

页数：3

共 8 条

[1]

FISHER AW, 1966, J ELECTROCHEM SOC, V113, P1054

[2]

KUGIMIYA K, 1981, 21ST P S SEM IC TECH, P12

[3]

Lee J., 1986, Materials Issues in Silicon Integrated Circuit Processing Symposium, P499

[4] TEMPORAL BEHAVIOR OF MODULATED OPTICAL REFLECTANCE IN SILICON [J].

OPSAL, J ;

TAYLOR, MW ;

SMITH, WL ;

ROSENCWAIG, A .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (01) :240-248

[5] GENERATION OF DISLOCATIONS AND STACKING-FAULTS AT SURFACE HETEROGENEITIES IN SILICON [J].

RAVI, KV .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (04) :1785-&

[6] DETECTION OF THERMAL WAVES THROUGH OPTICAL REFLECTANCE [J].

ROSENCWAIG, A ;

OPSAL, J ;

SMITH, WL ;

WILLENBORG, DL .

APPLIED PHYSICS LETTERS, 1985, 46 (11) :1013-1015

[7]

SMITH WL, 1986, SEMICONDUCTOR SILICO, P206

[8]

YAMABE K, 1983, DEFECTS SILICON, P629

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