GENERATION OF DISLOCATIONS AND STACKING-FAULTS AT SURFACE HETEROGENEITIES IN SILICON

被引：12

作者：

RAVI, KV

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1972年 / 43卷 / 04期

关键词：

D O I：

10.1063/1.1661396

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1785 / &

共 38 条

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