SURFACE-FIELD-INDUCED TUNNEL-JUNCTIONS ON INAS

被引：9

作者：

KUNZE, U ^{[1
]}

KOWALSKY, W ^{[1
]}

机构：

[1] TECH UNIV BRUNSWICK,INST HOCHFREQUENZTECH,D-3300 BRUNSWICK,FED REP GER

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 05期

关键词：

D O I：

10.1063/1.99896

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：367 / 369

页数：3

共 12 条

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BROWN, ER ;

SOLLNER, TCLG ;

GOODHUE, WD ;

PARKER, CD .

APPLIED PHYSICS LETTERS, 1987, 50 (02) :83-85

[2] RESONANT TUNNELING TRANSISTOR WITH QUANTUM WELL BASE AND HIGH-ENERGY INJECTION - A NEW NEGATIVE DIFFERENTIAL RESISTANCE DEVICE [J].

CAPASSO, F ;

KIEHL, RA .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) :1366-1368

[3]

DUKE CB, 1969, SOLID STATE PHYSIC S, V10

[4] EFFECT OF INELASTIC-SCATTERING ON RESONANT AND SEQUENTIAL TUNNELING IN DOUBLE BARRIER HETEROSTRUCTURES [J].

JONSON, M ;

GRINCWAJG, A .

APPLIED PHYSICS LETTERS, 1987, 51 (21) :1729-1731

[5]

KLEINHOLZ L. H., 1961, PHYSIOL CRUSTACEA, P133

[6] TUNNELING AND TRANSVERSE-WAVE VECTOR CONSERVATION IN GAAS/ALGAAS HETEROSTRUCTURES [J].

LEBENS, JA ;

SILSBEE, RH ;

WRIGHT, SL .

APPLIED PHYSICS LETTERS, 1987, 51 (11) :840-842

[7] FREQUENCY LIMIT OF DOUBLE-BARRIER RESONANT-TUNNELING OSCILLATORS [J].

LURYI, S .

APPLIED PHYSICS LETTERS, 1985, 47 (05) :490-492

[8] FERMI LEVEL POSITION AT SEMICONDUCTOR SURFACES [J].

MEAD, CA ;

SPITZER, WG .

PHYSICAL REVIEW LETTERS, 1963, 10 (11) :471-&

[9] OBSERVATION OF A NEGATIVE DIFFERENTIAL RESISTANCE DUE TO TUNNELING THROUGH A SINGLE BARRIER INTO A QUANTUM-WELL [J].

MORKOC, H ;

CHEN, J ;

REDDY, UK ;

HENDERSON, T ;

LURYI, S .

APPLIED PHYSICS LETTERS, 1986, 49 (02) :70-72

[10] ENERGY-MOMENTUM RELATIONSHIP IN INAS [J].

PARKER, GH ;

MEAD, CA .

PHYSICAL REVIEW LETTERS, 1968, 21 (09) :605-&

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