P-TYPE PTSI SCHOTTKY-DIODE BARRIER HEIGHT DETERMINED FROM IV MEASUREMENT

被引：24

作者：

CHIN, VWL ^{[1
]}

STOREY, JWV ^{[1
]}

GREEN, MA ^{[1
]}

机构：

[1] UNIV NEW S WALES,JOINT MICROELECTR RES CTR,KENSINGTON,NSW 2033,AUSTRALIA

来源：

关键词：

D O I：

10.1016/0038-1101(89)90029-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：475 / 478

页数：4

共 12 条

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KURIANSKI, JM
SHANAHAN, ST
THEDEN, U
GREEN, MA
STORYE, JWV
[J]. SOLID-STATE ELECTRONICS, 1989, 32 (02) : 97 - 101
[4] MOONEY JM, 1986, THESIS U ARIZONA
[5] Rhoderick E.H., 1978, METAL SEMICONDUCTORS
[6] RIDEOUT VL, 1978, THIN SOLID FILMS, V48, P270
[7] CONTROL OF SCHOTTKY-BARRIER HEIGHT USING HIGHLY DOPED SURFACE-LAYERS
SHANNON, JM
[J]. SOLID-STATE ELECTRONICS, 1976, 19 (06) : 537 - 543
[8] Sze S. M., 1981, PHYSICS SEMICONDUCTO, P18
[9] SZE SM, 1981, PHYSICS SEMICONDUCTO
[10] TOYAMA N, 1985, APPL PHYS LETT, V46, P557, DOI 10.1063/1.95537