PERFORMANCE OF HYBRID GAAS-MESFET LOGIC

被引：2

作者：

STARTIN, RA

机构：

[1] Integrated Systems Development Department, Ipswich, IP4 IDW, Lower Brook Street

来源：

INTERNATIONAL JOURNAL OF ELECTRONICS | 1979年 / 46卷 / 02期

关键词：

D O I：

10.1080/00207217908900981

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A hybrid logic using 2 µ gate length GoAs MESFETs is described. It operates as a divide-by-two at up to 550 MHz. Reasons for expecting a redesigned hybrid using 1 µ gate length devices to run at about three times this speed are given; they are substantiated with reference to monolithic circuits. © Taylor and Francis Group, LLC.

引用

页码：161 / 165

页数：5

共 6 条

[1]

CSANKY G, 1963, ELECTRON, V36, P43

[2] ANALYSIS OF LOAD STRUCTURES FOR CURRENT-MODE LOGIC [J].

ELMASRY, MI ;

THOMPSON, PM .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1975, SC10 (01) :72-75

[3] HYBRID THIN-FILM LOGIC-CIRCUIT USING GALLIUM-ARSENIDE FIELD-EFFECT TRANSISTORS [J].

STARTIN, RA ;

CROSS, AC .

ELECTROCOMPONENT SCIENCE AND TECHNOLOGY, 1978, 5 (02) :113-117

[4]

VANTUYL R, 1977, IEEE SPECTRUM, V14, P40

[5]

VANTUYL R, 1977, ISSCC TECHNICAL DIGE, P198

[6] GAAS MESFET LOGIC WITH 4-GHZ CLOCK RATE [J].

VANTUYL, RL ;

LIECHTI, CA ;

LEE, RE ;

GOWEN, E .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1977, 12 (05) :485-496

← 1 →