TEST OF RADIATION HARDNESS OF CMOS TRANSISTORS UNDER NEUTRON-IRRADIATION

被引：3

作者：

SADROZINSKI, HFW ^{[1
]}

ROWE, WA ^{[1
]}

SEIDEN, A ^{[1
]}

SPENCER, E ^{[1
]}

HOFFMAN, CM ^{[1
]}

HOLTKAMP, D ^{[1
]}

KINNISON, WW ^{[1
]}

SOMMER, WF ^{[1
]}

ZIOCK, HJ ^{[1
]}

机构：

[1] UNIV CALIF LOS ALAMOS SCI LAB,LOS ALAMOS,NM 87545

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1990年 / 288卷 / 01期

关键词：

D O I：

10.1016/0168-9002(90)90466-J

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We have tested 2 μm CMOS test structures from various foundries in the LAMPF beam stop for radiation damage under prolonged neutron irradiation. The fluxes employed were higher than the ones expected to be encountered at the SSC and led to fluences of up to 1015 neutrons/cm2 in about 500 h of running. We show that test structures which have been measured to survive ionizing radiation of the order of Mrad also survive these high neutron fluences. © 1990.

引用

页码：76 / 78

页数：3