REDUCTION OF INTERFACE RECOMBINATION VELOCITY WITH DECREASING LATTICE-PARAMETER MISMATCH IN PBSNTE HETEROJUNCTIONS

被引：13

作者：

KASEMSET, D ^{[1
]}

FONSTAD, CG ^{[1
]}

机构：

[1] MIT,DEPT MAT SCI & ENGN,CAMBRIDGE,MA 02139

来源：

JOURNAL OF APPLIED PHYSICS | 1979年 / 50卷 / 07期

关键词：

D O I：

10.1063/1.326526

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the first measurements demonstrating and quantifying the systematic reduction of the interface recombination velocity at the (Pb,Sn)Te/PbTe heterojunction interface with decreasing lattice-parameter mismatch. The relation between the degree of lattice-parameter mismatch and the interface recombination velocity is found to be sv = (2.9±0.3) ×107Δε/ε cm/sec. In conjunction with these measurements, we have also observed very low threshold current densities in laser devices fabricated with a small degree of lattice-parameter mimismatch. The lowest threshold current density observed was 15 A/cm2 in a Pb0.96Sn0.04Te/PbTe single-heterostructure laser with a 20-μm active-region width. This is the lowest current density ever reported in (Pb,Sn)Te-diode lasers.

引用

页码：5028 / 5029

页数：2

共 6 条

[1] DOUBLE HETEROSTRUCTURE PB1-XSNX TE-PBTE LASERS WITH CW OPERATION AT 77 K [J].