LEAD-TIN TELLURIDE DOUBLE-HETEROJUNCTION LASER-DIODES - THEORY AND EXPERIMENT

被引：25

作者：

TOMASETTA, LR

FONSTAD, CG

机构：

[1] MIT, CTR MAT SCI & ENGN, CAMBRIDGE, MA 02139 USA

[2] MIT, DEPT ELECT ENGN, CAMBRIDGE, MA 02139 USA

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1975年 / QE11卷 / 07期

关键词：

D O I：

10.1109/JQE.1975.1068639

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：384 / 390

页数：7

共 22 条

[1]

ADLER MS, PHYS REV B, V7, P5186

[2] MODE CONFINEMENT AND GAIN IN JUNCTION LASERS [J].

ANDERSON, WW .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1965, QE 1 (06) :228-+

[3]

ASBECK P, 1974, THESIS MASSACHUSETTS

[4] LASER CONDITIONS IN SEMICONDUCTORS [J].

BERNARD, MGA ;

DURAFFOURG, G .

PHYSICA STATUS SOLIDI, 1961, 1 (07) :699-703

[5]

BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS, V3

[6] DOUBLE HETEROSTRUCTURE PB1-XSNX TE-PBTE LASERS WITH CW OPERATION AT 77 K [J].

GROVES, SH ;

NILL, KW ;

STRAUSS, AJ .

APPLIED PHYSICS LETTERS, 1974, 25 (06) :331-333

[7] MODE GAIN AND JUNCTION CURRENT IN GAAS UNDER LASING CONDITIONS [J].

HAKKI, BW .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (01) :288-294

[8]

HARMAN TC, 1971, PHYSICS SEMIMETALS N, P363

[9]

HARMAN TC, APPLIED SOLID STATE, V4, P69

[10] SPONTANEOUS + STIMULATED RECOMBINATION RADIATION IN SEMICONDUCTORS [J].

LASHER, G ;

STERN, F .

PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 133 (2A) :A553-&

← 1 2 3 →