DENSITY OF STATES FOR CLEAVED SI (111) FROM L1L2,3V AND L2,3VV AUGER-SPECTRA

被引：21

作者：

BROCKMAN, RH

RUSSELL, GJ

机构：

来源：

PHYSICAL REVIEW B | 1980年 / 22卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.22.6302

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：6302 / 6307

页数：6

相关论文

共 32 条

[1] BAND STRUCTURE OF SILICON BY CHARACTERISTIC AUGER ELECTRON SPECTRUM ANALYSIS
AMELIO, GF
[J]. SURFACE SCIENCE, 1970, 22 (02) : 301 - &
[2] SURFACE VALENCE BAND AND PLASMON FEATURES ON CLEAN CLEAVED SILICON
ARNOTT, DR
HANEMAN, D
[J]. SURFACE SCIENCE, 1974, 45 (01) : 128 - 140
[3] CHARACTERISTIC ENERGIES IN SECONDARY ELECTRON SPECTRA FROM SI(111) SURFACES
CHUNG, MF
JENKINS, LH
[J]. SURFACE SCIENCE, 1971, 26 (02) : 649 - &
[4] MEASUREMENT OF VALENCE BAND AUGER-SPECTRA FOR GAAS(110) FROM GA AND AS-CCV TRANSITIONS
DAVIS, GD
LAGALLY, MG
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04): : 1311 - 1316
[5] THEORY OF AUGER LINE-SHAPES IN CHEMISORPTION OF CL ON SI(111)
FEIBELMAN, PJ
MCGUIRE, EJ
PANDEY, KC
[J]. PHYSICAL REVIEW B, 1978, 17 (04): : 1799 - 1807
[6] VALENCE-BAND AUGER LINE-SHAPES FOR SI SURFACES - SIMPLIFIED THEORY AND CORRECTED NUMERICAL RESULTS
FEIBELMAN, PJ
MCGUIRE, EJ
[J]. PHYSICAL REVIEW B, 1978, 17 (02): : 690 - 698
[7] THEORY OF VALENCE-BAND AUGER-SPECTRA - GAAS(110)
FEIBELMAN, PJ
MCGUIRE, EJ
PANDEY, KC
[J]. PHYSICAL REVIEW B, 1977, 16 (12) : 5499 - 5505
[8] FEIBELMAN PJ, 1977, PHYS REV B, V15, P3575
[9] L1L2,3V AUGER TRANSITION IN SI
FERRER, S
BARO, AM
SALMERON, M
[J]. SOLID STATE COMMUNICATIONS, 1975, 16 (05) : 651 - 653
[10] PHOTOEMISSION VALENCE-BAND DENSITIES OF STATES FOR SI, GE, AND GAAS USING SYNCHROTRON RADIATION
GROBMAN, WD
EASTMAN, DE
[J]. PHYSICAL REVIEW LETTERS, 1972, 29 (22) : 1508 - &

← 1 2 3 4 →