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DONOR DENSITIES IN TIO2 PHOTOELECTRODES
被引:69
作者
:
SCHOONMAN, J
论文数:
0
引用数:
0
h-index:
0
SCHOONMAN, J
VOS, K
论文数:
0
引用数:
0
h-index:
0
VOS, K
BLASSE, G
论文数:
0
引用数:
0
h-index:
0
BLASSE, G
机构
:
来源
:
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
|
1981年
/ 128卷
/ 05期
关键词
:
D O I
:
10.1149/1.2127569
中图分类号
:
O646 [电化学、电解、磁化学];
学科分类号
:
081704 ;
摘要
:
引用
收藏
页码:1154 / 1157
页数:4
相关论文
共 32 条
[31]
CHARACTERIZED SEMICONDUCTOR ELECTRODES .1. EFFECT OF PROCESSING VARIABLES ON THE PHOTOELECTROCHEMICAL PROPERTIES OF SINGLE-CRYSTAL TIO2 (RUTILE)
[J].
WILSON, RH
论文数:
0
引用数:
0
h-index:
0
机构:
General Electric Company, Research and Development Center, Schenectady
WILSON, RH
;
HARRIS, LA
论文数:
0
引用数:
0
h-index:
0
机构:
General Electric Company, Research and Development Center, Schenectady
HARRIS, LA
;
GERSTNER, ME
论文数:
0
引用数:
0
h-index:
0
机构:
General Electric Company, Research and Development Center, Schenectady
GERSTNER, ME
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1979,
126
(05)
:844
-850
[32]
1951, GMELIN HDB ANORGANIS, V41, P391
←
1
2
3
4
→
共 32 条
[31]
CHARACTERIZED SEMICONDUCTOR ELECTRODES .1. EFFECT OF PROCESSING VARIABLES ON THE PHOTOELECTROCHEMICAL PROPERTIES OF SINGLE-CRYSTAL TIO2 (RUTILE)
[J].
WILSON, RH
论文数:
0
引用数:
0
h-index:
0
机构:
General Electric Company, Research and Development Center, Schenectady
WILSON, RH
;
HARRIS, LA
论文数:
0
引用数:
0
h-index:
0
机构:
General Electric Company, Research and Development Center, Schenectady
HARRIS, LA
;
GERSTNER, ME
论文数:
0
引用数:
0
h-index:
0
机构:
General Electric Company, Research and Development Center, Schenectady
GERSTNER, ME
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1979,
126
(05)
:844
-850
[32]
1951, GMELIN HDB ANORGANIS, V41, P391
←
1
2
3
4
→