ISLAND SCALING IN STRAINED HETEROEPITAXY - INAS/GAAS(001)

被引：98

作者：

BRESSLERHILL, V

VARMA, S

LORKE, A

NOSHO, BZ

PETROFF, PM

WEINBERG, WH

机构：

[1] UNIV CALIF SANTA BARBARA,DEPT CHEM ENGN,SANTA BARBARA,CA 93106

[2] UNIV CALIF SANTA BARBARA,DEPT MAT,SANTA BARBARA,CA 93106

来源：

PHYSICAL REVIEW LETTERS | 1995年 / 74卷 / 16期

关键词：

D O I：

10.1103/PhysRevLett.74.3209

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Scaling properties associated with island size and separation distributions are presented for three different coverages of InAs on GaAs(001). The island size distribution is similar to that observed for homoepitaxy and obeys scaling behavior when considering the average island area. Since the island growth is anisotropic, the island size distribution was separated into [110] and [110] components, and scaling is only observed in the [110] direction. An analysis of the radial distribution of the islands shows clustering. © 1995 The American Physical Society.

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页码：3209 / 3212

页数：4

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