INSITU SCANNING TUNNELING MICROSCOPY OBSERVATION OF SURFACE-MORPHOLOGY OF GAAS(001) GROWN BY MOLECULAR-BEAM EPITAXY

被引：110

作者：

HELLER, EJ

LAGALLY, MG

机构：

[1] University of Wisconsin-Madison, Madison

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 21期

关键词：

D O I：

10.1063/1.106892

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The surface morphology of molecular-beam-epitaxy-grown GaAs(001) has been investigated using in situ scanning tunneling microscopy and reflection high-energy electron diffraction. Films grown on nominally flat substrates at very slow growth rates display a multilevel system of terraces elongated along [110BAR], suggesting an edge energy anisotropy of the order of 10:1 and a preference for sticking at B-type steps.

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页码：2675 / 2677

页数：3

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