TEXTURE ANALYSIS OF POLYCRYSTALLINE SILICON FILMS

被引：17

作者：

WENK, HR

SINTUBIN, M

HUANG, J

JOHNSON, GC

HOWE, RT

机构：

[1] CATHOLIC UNIV LEUVEN,NSFR,INST AARDWETENSCHAPPEN,B-3030 HEVERLE,BELGIUM

[2] UNIV CALIF BERKELEY,BERKELEY SENSOR & ACTUATOR CTR,DEPT ELECTR ENGN & COMP SCI,BERKELEY,CA 94720

[3] UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720

[4] UNIV CALIF BERKELEY,BERKELEY SENSOR & ACTUATOR CTR,DEPT MECH ENGN,BERKELEY,CA 94720

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 67卷 / 01期

关键词：

D O I：

10.1063/1.345196

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A method for the quantitative characterization of texture in thin films using x-ray diffraction is presented. The traditional technique, which makes use of a powder diffractometer, relies on peak intensity measurements at normal incidence. By using pole figure measurements and subsequent orientation distribution analysis we obtain the substantially improved coverage necessary to accurately characterize textures of thin silicon films which exhibit great variation and complexity.

引用

页码：572 / 574

页数：3

共 8 条

[1]

BUNGE HJ, 1982, TEXTURE ANAL MATERIA

[2]

Fan L. S., 1988, 1988 Solid State Sensor and Actuator Workshop. Technical Digest (Cat. No.88TH0215-4), P55, DOI 10.1109/SOLSEN.1988.26432

[3]

HARBEKE G, 1983, RCA REV, V44, P287

[4] SURFACE MICROMACHINING FOR MICROSENSORS AND MICROACTUATORS [J].