GROWTH CHARACTERISTICS OF RUTILE FILM BY CHEMICAL VAPOR DEPOSITION

[1] DEPOSITION AND PROPERTIES OF ALUMINUM OXIDE OBTAINED BY PYROLYTIC DECOMPOSITION OF AN ALUMINUM ALKOXIDE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (09) : 948 - &

[2] EMISSIVITY AT 0.65 MICRON OF SILICON AND GERMANIUM AT HIGH TEMPERATURES [J]. JOURNAL OF APPLIED PHYSICS, 1957, 28 (12) : 1510 - 1511

[3] METHOD OF PREPARING SI AND GE SPECIMENS FOR EXAMINATION BY TRANSMISSION ELECTRON MICROSCOPY [J]. BRITISH JOURNAL OF APPLIED PHYSICS, 1962, 13 (09): : 446 - &

[4] CAVE EF, 1963, RCA REV, V24, P523

[5] CHU TL, 1968, T METALL SOC AIME, V242, P532

[6] REFRACTIVE INDICES OF RUTILE AND SPHALERITE [J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1951, 41 (06) : 416 - 419

[7] DUFFY MT, 1968, J ELECTROCHEM SOC, V115, pC61

[8] FLUERSANGER AE, 1964, P IEEE, V52, P1463

[9] MECHANISM OF HETEROGENEOUS DEPOSITION OF THIN FILM RUTILE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (04) : 529 - +

[10] OXYGEN ADSORPTION ON SILICON AND GERMANIUM [J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (06) : 1020 - &

[1] DEPOSITION AND PROPERTIES OF ALUMINUM OXIDE OBTAINED BY PYROLYTIC DECOMPOSITION OF AN ALUMINUM ALKOXIDE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (09) : 948 - &

[2] EMISSIVITY AT 0.65 MICRON OF SILICON AND GERMANIUM AT HIGH TEMPERATURES [J]. JOURNAL OF APPLIED PHYSICS, 1957, 28 (12) : 1510 - 1511

[3] METHOD OF PREPARING SI AND GE SPECIMENS FOR EXAMINATION BY TRANSMISSION ELECTRON MICROSCOPY [J]. BRITISH JOURNAL OF APPLIED PHYSICS, 1962, 13 (09): : 446 - &

[4] CAVE EF, 1963, RCA REV, V24, P523

[5] CHU TL, 1968, T METALL SOC AIME, V242, P532

[6] REFRACTIVE INDICES OF RUTILE AND SPHALERITE [J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1951, 41 (06) : 416 - 419

[7] DUFFY MT, 1968, J ELECTROCHEM SOC, V115, pC61

[8] FLUERSANGER AE, 1964, P IEEE, V52, P1463

[9] MECHANISM OF HETEROGENEOUS DEPOSITION OF THIN FILM RUTILE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (04) : 529 - +

[10] OXYGEN ADSORPTION ON SILICON AND GERMANIUM [J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (06) : 1020 - &