ELECTRICAL CHARACTERISTICS DEPENDENCE ON ALUMINUM MOLE FRACTION IN (AL0.5GA0.5)SB/INAS/(ALXGA1-X)SB HETEROSTRUCTURE

被引：19

作者：

YOH, K

MORIUCHI, T

YANO, M

INOUE, M

机构：

[1] Department of Electrical Engineering, Osaka Institute of Technology, 535, 5-16-1 Omiya, Asahi-ku, Osak

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 111卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(91)91056-G

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have studied the electrical characteristics of the (Al0.5Ga0.5)Sb/InAs/(Al(x)Ga1-x)Sb heterosystems in a variety of samples with different aluminum mole fraction, x. Negative photoconductivity has been observed when the aluminum mole fraction is between 0.2 and 1.0. Reduction of both electron mobility and sheet carrier concentration by the light illumination was post pronounced at x = 0.75. The negative photoconductivity of an (Al0.5Ga0.5)Sb/InAs/(Al0.5Ga0.5)Sb structure was found to disappear at high electric fields by pulsed Hall-effect measurements suggesting increased Coulombic scattering being the origin of the negative photoconductivity.

引用

页码：643 / 646

页数：4

共 7 条

[1] SELF-CONSISTENT CALCULATIONS IN INAS-GASB HETEROJUNCTIONS [J].