TEMPERATURE-DEPENDENCE OF THE BAND-GAP OF FES2

被引:33
作者
SEEHRA, MS
SEEHRA, SS
机构
[1] Physics Department, West Virginia University, Morgantown
来源
PHYSICAL REVIEW B | 1979年 / 19卷 / 12期
关键词
D O I
10.1103/PhysRevB.19.6620
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Optical-absorption studies of the band gap Eg in a 150-m-thick natural single crystal of FeS2 for temperatures T up to 425 K are presented. Different contributions to the temperature dependence of Eg are discussed. It is argued that the variation of the form Eg(T)=Eg(0)+aT+bT2, with the parameters Eg(0)=0.835 eV, a=4.0×10-5 eV/K, b=-7.4×10-7 eV/K2 obtained from the best fit, provides a good physical interpretation of the data. © 1979 The American Physical Society.
引用
收藏
页码:6620 / 6621
页数:2
相关论文
共 6 条
[1]   MAGNETIC-SUSCEPTIBILITY OF IRON PYRITE (FES2) BETWEEN 4.2 AND 620K [J].
BURGARDT, P ;
SEEHRA, MS .
SOLID STATE COMMUNICATIONS, 1977, 22 (02) :153-156
[2]   COMPOSITIONAL TRENDS IN OPTICAL PROPERTIES OF AMORPHOUS LONE-PAIR SEMICONDUCTORS [J].
KASTNER, M .
PHYSICAL REVIEW B, 1973, 7 (12) :5237-5252
[3]  
KOU WW, 1978, PHYS REV B, V18, P7062, DOI 10.1103/PhysRevB.18.7062
[4]  
MOTT NF, 1971, ELECTRONIC PROCESSES, P246
[5]   TEMPERATURE AND FIELD-DEPENDENCE OF OPTICAL-ABSORPTION EDGE IN AMORPHOUS AS2S3 [J].
STREET, RA ;
SEARLE, TM ;
AUSTIN, IG ;
SUSSMANN, RS .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1974, 7 (08) :1582-1594
[6]   TEMPERATURE DEPENDENCE OF ENERGY GAP IN SEMICONDUCTORS [J].
VARSHNI, YP .
PHYSICA, 1967, 34 (01) :149-&