GROWTH MODE AND STRAIN RELAXATION DURING THE INITIAL-STAGE OF INXGA1-XAS GROWTH ON GAAS(001)

被引：34

作者：

LENTZEN, M ^{[1
]}

GERTHSEN, D ^{[1
]}

FORSTER, A ^{[1
]}

URBAN, K ^{[1
]}

机构：

[1] FORSCHUNGSZENTRUM JULICH, INST SCHICHT & IONENTECH, W-5170 JULICH 1, GERMANY

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 01期

关键词：

D O I：

10.1063/1.107379

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The growth mode and relaxation of the misfit strain of thin InxGa1-xAs layers grown by molecular-beam epitaxy on GaAs(001) were studied by plan-view transmission electron microscopy. The indium concentration was varied between x = 0.13 and x = 1.0. The transition from two-dimensional to island growth was found at x = 0.4. The island growth mode is characterized by islands of different sizes in various states of strain relaxation which is determined by the density of misfit dislocations at the interface.

引用

页码：74 / 76

页数：3

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