TOTAL-DOSE RADIATION EFFECTS ON SOL-GEL DERIVED PZT THIN-FILMS

被引：48

作者：

LEE, SC ^{[1
]}

TEOWEE, G ^{[1
]}

SCHRIMPF, RD ^{[1
]}

BIRNIE, DP ^{[1
]}

UHLMANN, DR ^{[1
]}

GALLOWAY, KF ^{[1
]}

机构：

[1] UNIV ARIZONA,DEPT MAT SCI & ENGN,TUCSON,AZ 85721

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1992年 / 39卷 / 06期

关键词：

D O I：

10.1109/23.211401

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Sol-Gel derived PZT thin films were irradiated to a total-dose of 1 Mrad(Si), or 86 krad(PZT), under open circuit bias. An asymmetric distortion in the hysteresis curves was observed. The distortion depends on the polarization state of the capacitor before irradiation. Post-irradiation electrical cycling makes the hysteresis loops symmetric initially, but results in fatigue effects. The leakage and switching current behavior after irradiation and post-rad cycling were studied using a static current vs. voltage measurement. Mechanisms of radiation-induced distortion and the fatigue effect during post-rad cycling are discussed.

引用

页码：2036 / 2043

页数：8

共 12 条

[1] THE EFFECT OF IONIZING-RADIATION ON SOL-GEL FERROELECTRIC PZT CAPACITORS [J].