TOPOGRAPHY OF HIGH-INDEX AND LOW-INDEX GAAS-SURFACES

被引：118

作者：

NOTZEL, R

DAWERITZ, L

PLOOG, K

机构：

[1] Max-Planck-Institut fur Festkorperforschung

来源：

PHYSICAL REVIEW B | 1992年 / 46卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.46.4736

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have investigated the surface structure of the nonsingular (331), (311), (21 1), and (2 10) GaAs surfaces and of the singular (110) and (111) GaAs surfaces during molecular-beam epitaxy. Reflection high-energy electron diffraction directly reveals the formation of periodically arranged macrosteps with spacings and heights in the nanometer range. Nonsingular planes break up into singular surface configurations, whereas the singular surfaces transform into vicinal planes. Surface reconstruction plays an important role in the stabilization of terrace and step widths. The surface structures give rise to lateral confinement effects, which drastically changes the electronic properties of GaAs/AlAs multilayer structures.

引用

页码：4736 / 4743

页数：8

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