CHARACTERIZATION OF SURFACE FACETING ON (110)GAAS/GAAS GROWN BY MOLECULAR-BEAM EPITAXY

[1] DEVICE QUALITY GROWTH AND CHARACTERIZATION OF (110) GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1987, 51 (09) : 670 - 672

[2] CRYSTAL ORIENTATION DEPENDENCE OF SILICON AUTOCOMPENSATION IN MOLECULAR-BEAM EPITAXIAL GALLIUM-ARSENIDE [J]. APPLIED PHYSICS LETTERS, 1982, 41 (10) : 947 - 949

[3] BEAN JC, 1981, DEC INT EL DEV M C

[4] BRIGANS RD, 1986, PHYS REV LETT, V56, P520

[5] Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9

[6] KROEMER H, 1986, MATER RES SOC S P, V67, P3

[7] DETERMINATION OF ARSENIC AND GA PLANES BY CONVERGENT BEAM ELECTRON-DIFFRACTION [J]. APPLIED PHYSICS LETTERS, 1986, 49 (18) : 1190 - 1192

[8] DOUBLE-HETEROSTRUCTURE GAAS-AL-XGA-1-XAS [110] P-N-JUNCTION-DIODE MODULATOR [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (05) : 2069 - 2078

[9] PARECHANIAN LT, 1985, MATER RES SOC S P, V46, P391

[10] BAND-STRUCTURE DEPENDENCE OF IMPACT IONIZATION BY HOT CARRIERS IN SEMICONDUCTORS - GAAS [J]. SOLID-STATE ELECTRONICS, 1978, 21 (01) : 297 - 302

[1] DEVICE QUALITY GROWTH AND CHARACTERIZATION OF (110) GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1987, 51 (09) : 670 - 672

[2] CRYSTAL ORIENTATION DEPENDENCE OF SILICON AUTOCOMPENSATION IN MOLECULAR-BEAM EPITAXIAL GALLIUM-ARSENIDE [J]. APPLIED PHYSICS LETTERS, 1982, 41 (10) : 947 - 949

[3] BEAN JC, 1981, DEC INT EL DEV M C

[4] BRIGANS RD, 1986, PHYS REV LETT, V56, P520

[5] Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9

[6] KROEMER H, 1986, MATER RES SOC S P, V67, P3

[7] DETERMINATION OF ARSENIC AND GA PLANES BY CONVERGENT BEAM ELECTRON-DIFFRACTION [J]. APPLIED PHYSICS LETTERS, 1986, 49 (18) : 1190 - 1192

[8] DOUBLE-HETEROSTRUCTURE GAAS-AL-XGA-1-XAS [110] P-N-JUNCTION-DIODE MODULATOR [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (05) : 2069 - 2078

[9] PARECHANIAN LT, 1985, MATER RES SOC S P, V46, P391

[10] BAND-STRUCTURE DEPENDENCE OF IMPACT IONIZATION BY HOT CARRIERS IN SEMICONDUCTORS - GAAS [J]. SOLID-STATE ELECTRONICS, 1978, 21 (01) : 297 - 302