COMPARISON OF RECRYSTALLIZATION, ATOMIC REDISTRIBUTION AND F-1S NEXAFS OF FLUORINE IN SILICON

Buried layers of fluorine were prepared by ion implantation technique. Degree of amorphization and atomic redistribution after thermal treatment were measured by RBS and SIMS, respectively. Fluorescense NEXAFS with synchrotron radiation was used to study electronical structural changes at the F 1s edge. Both, increase of implantation dose and annealing, cause a shift of the F 1s aborption edge to higher energies and a formation of additional peaks at 690, 695, and 716 eV. This behaviour is referred not only to the increase of crystal defects, but also to the interaction between neighboured fluorine and silicon atoms.