INFLUENCE OF MECHANICAL-STRESS ON LIGHT-INDUCED CREATION OF DEFECTS IN HYDROGENATED AMORPHOUS-SILICON

被引：6

作者：

GHAITH, A ^{[1
]}

机构：

[1] UNIV CHICAGO,JAMES FRANCK INST,CHICAGO,IL 60637

来源：

PHILOSOPHICAL MAGAZINE LETTERS | 1987年 / 55卷 / 04期

关键词：

PHOTOCONDUCTIVITY - Measurements - SEMICONDUCTING FILMS - Amorphous - STRESSES;

D O I：

10.1080/09500838708207556

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effect of mechanical stress on light-induced changes in photoconductivity has been studied in films of plasma-deposited hydrogenated amorphous silicon on different substrates. The experimental results reveal no correlation between the degradation of the photoconductivity and the mechanical stress in these films. These findings contradict the observations of M. Stutzmann but agree with those of S. Guha et al.

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页码：197 / 200

页数：4

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