INFLUENCE OF STRESS ON LIGHT-INDUCED EFFECTS IN AMORPHOUS-SILICON ALLOYS

被引：16

作者：

GUHA, S

DENBOER, W

AGARWAL, SC

HACK, M

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 09期

关键词：

D O I：

10.1063/1.95938

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：947 / 949

页数：3

共 11 条

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CRANDALL, RS ;

STAEBLER, DL .

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[3] FAILURE OF RECIPROCITY IN LIGHT-INDUCED-CHANGES IN HYDROGENATED AMORPHOUS-SILICON ALLOYS [J].

GUHA, S .

APPLIED PHYSICS LETTERS, 1984, 45 (05) :569-570

[4]

GUHA S, 1983, APPL PHYS LETT, V42, P589

[5] PHOTOCONDUCTIVITY AND RECOMBINATION IN AMORPHOUS-SILICON ALLOYS [J].

HACK, M ;

GUHA, S ;

SHUR, M .

PHYSICAL REVIEW B, 1984, 30 (12) :6991-6999

[6] EFFECT OF SILANE DILUTION ON INTRINSIC STRESS IN GLOW-DISCHARGE HYDROGENATED AMORPHOUS-SILICON FILMS [J].

HARBISON, JP ;

WILLIAMS, AJ ;

LANG, DV .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (04) :946-951

[7] SHAPE OF DISORDER [J].

OVSHINSKY, SR .

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[8] REVERSIBLE CONDUCTIVITY CHANGES IN DISCHARGE-PRODUCED AMORPHOUS SI [J].

STAEBLER, DL ;

WRONSKI, CR .

APPLIED PHYSICS LETTERS, 1977, 31 (04) :292-294

[9] ROLE OF MECHANICAL-STRESS IN THE LIGHT-INDUCED DEGRADATION OF HYDROGENATED AMORPHOUS-SILICON [J].

STUTZMANN, M .

APPLIED PHYSICS LETTERS, 1985, 47 (01) :21-23

[10]

STUTZMANN M, PHYS REV B

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