PROPERTIES OF THE DEFECT CAUSING SOLAR-CELL DEGRADATION

[1] AST DG, 1979, I PHYS C SER, V43, P1159

[2] Carlson D. E., 1980, Polycrystalline and amorphous thin films and devices, P175

[3] IDENTIFICATION OF THE DANGLING-BOND STATE WITHIN THE MOBILITY GAP OF ALPHA-SI-H BY DEPLETION-WIDTH-MODULATED ELECTRON-SPIN-RESONANCE SPECTROSCOPY [J]. PHYSICAL REVIEW LETTERS, 1982, 48 (02) : 109 - 112

[4] CALCULATION OF THE DYNAMIC-RESPONSE OF SCHOTTKY BARRIERS WITH A CONTINUOUS DISTRIBUTION OF GAP STATES [J]. PHYSICAL REVIEW B, 1982, 25 (08) : 5321 - 5350

[5] TRAP SPECTROSCOPY OF A-SI-H DIODES USING TRANSIENT CURRENT TECHNIQUES [J]. JOURNAL OF ELECTRONIC MATERIALS, 1980, 9 (04) : 713 - 726

[6] DEEP ELECTRON TRAPS IN HYDROGENATED AMORPHOUS-SILICON [J]. PHYSICAL REVIEW B, 1981, 24 (12): : 7457 - 7459

[7] LIGHT-INDUCED DANGLING BONDS IN HYDROGENATED AMORPHOUS-SILICON [J]. APPLIED PHYSICS LETTERS, 1981, 38 (06) : 456 - 458

[8] CHARACTERIZATION OF GLOW-DISCHARGE DEPOSITED A-SI-H [J]. SOLAR ENERGY MATERIALS, 1980, 3 (04): : 447 - 501

[9] DRIFT MOBILITY AND PHOTOCONDUCTIVITY IN AMORPHOUS SILICON [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1978, 89 (02): : 495 - 502

[10] GRUNEWALD M, 1981, J PHYS-PARIS, V42, P523

[1] AST DG, 1979, I PHYS C SER, V43, P1159

[2] Carlson D. E., 1980, Polycrystalline and amorphous thin films and devices, P175

[3] IDENTIFICATION OF THE DANGLING-BOND STATE WITHIN THE MOBILITY GAP OF ALPHA-SI-H BY DEPLETION-WIDTH-MODULATED ELECTRON-SPIN-RESONANCE SPECTROSCOPY [J]. PHYSICAL REVIEW LETTERS, 1982, 48 (02) : 109 - 112

[4] CALCULATION OF THE DYNAMIC-RESPONSE OF SCHOTTKY BARRIERS WITH A CONTINUOUS DISTRIBUTION OF GAP STATES [J]. PHYSICAL REVIEW B, 1982, 25 (08) : 5321 - 5350

[5] TRAP SPECTROSCOPY OF A-SI-H DIODES USING TRANSIENT CURRENT TECHNIQUES [J]. JOURNAL OF ELECTRONIC MATERIALS, 1980, 9 (04) : 713 - 726

[6] DEEP ELECTRON TRAPS IN HYDROGENATED AMORPHOUS-SILICON [J]. PHYSICAL REVIEW B, 1981, 24 (12): : 7457 - 7459

[7] LIGHT-INDUCED DANGLING BONDS IN HYDROGENATED AMORPHOUS-SILICON [J]. APPLIED PHYSICS LETTERS, 1981, 38 (06) : 456 - 458

[8] CHARACTERIZATION OF GLOW-DISCHARGE DEPOSITED A-SI-H [J]. SOLAR ENERGY MATERIALS, 1980, 3 (04): : 447 - 501

[9] DRIFT MOBILITY AND PHOTOCONDUCTIVITY IN AMORPHOUS SILICON [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1978, 89 (02): : 495 - 502

[10] GRUNEWALD M, 1981, J PHYS-PARIS, V42, P523