DEFECTS IN AMORPHOUS CHALCOGENIDES AND SILICON

被引：134

作者：

ADLER, D ^{[1
]}

机构：

[1] MIT, CTR MAT SCI & ENGN, CAMBRIDGE, MA 02139 USA

来源：

JOURNAL DE PHYSIQUE | 1981年 / 42卷 / NC4期

关键词：

D O I：

10.1051/jphyscol:1981401

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学科分类号：

摘要：

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页码：3 / 14

页数：12

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[8] ADLER D, 1981, AIP C P, V73, P146
[9] MODEL FOR ELECTRONIC-STRUCTURE OF AMORPHOUS-SEMICONDUCTORS
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