SI AND GAAS SIS HETEROSTRUCTURE SOLAR-CELLS USING SPRAY-DEPOSITED ITO

被引:12
作者
SHARMA, PP
ANTHONY, TC
ASHOK, S
FONASH, SJ
TONGSON, LL
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D O I
10.7567/JJAPS.19S1.551
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O59 [应用物理学];
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页码:551 / 556
页数:6
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共 11 条
[1]  
Bachmann K. J., 1978, Thirteenth IEEE Photovoltaic Specialists Conference1978, P524
[2]  
BURK DE, 1976, APPL PHYS LETT, V29, P494
[3]   ELECTRONIC CHARACTERIZATION OF INDIUM TIN OXIDE-SILICON PHOTO-DIODES [J].
CHANG, NS ;
SITES, JR .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (09) :4833-4837
[4]   CURRENT/VOLTAGE CHARACTERISTICS OF P-N GE-SI AND GE-GAAS HETEROJUNCTIONS [J].
DONNELLY, JP ;
MILNES, AG .
PROCEEDINGS OF THE INSTITUTION OF ELECTRICAL ENGINEERS-LONDON, 1966, 113 (09) :1468-&
[5]  
Feng T., 1978, Thirteenth IEEE Photovoltaic Specialists Conference1978, P519
[6]  
FONASH SJ, CRC CRIT REV SOLID S
[7]  
HOVEL HJ, 1975, SEMICONDUCTORS SEMIM, V11, P94
[8]   EFFICIENT SPRAYED IN2O3-SN N-TYPE SILICON HETEROJUNCTION SOLAR-CELL [J].
MANIFACIER, JC ;
SZEPESSY, L .
APPLIED PHYSICS LETTERS, 1977, 31 (07) :459-462
[9]  
Reed T. B., 1971, FREE ENERGY FORMATIO
[10]  
RODERICK EH, 1974, METAL SEMICONDUCTOR, P3