ELECTRONIC CHARACTERIZATION OF INDIUM TIN OXIDE-SILICON PHOTO-DIODES

[1] PHOTOCURRENT SUPPRESSION IN HETEROJUNCTION SOLAR CELLS [J]. APPLIED PHYSICS LETTERS, 1975, 27 (12) : 691 - 693

[2] [Anonymous], 1955, J APPL PHYS, DOI [10.1063/1.1722034, DOI 10.1063/1.1722034]

[3] Burk D. E., 1976, Twelfth IEEE Photovoltaic Specialists Conference 1976, P971

[4] CURRENT/VOLTAGE CHARACTERISTICS OF P-N GE-SI AND GE-GAAS HETEROJUNCTIONS [J]. PROCEEDINGS OF THE INSTITUTION OF ELECTRICAL ENGINEERS-LONDON, 1966, 113 (09): : 1468 - &

[5] CAPACITANCE OF P-N HETEROJUNCTIONS INCLUDING EFFECTS OF INTERFACE STATES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (02) : 63 - +

[6] EFFICIENT PHOTOVOLTAIC HETEROJUNCTIONS OF INDIUM TIN OXIDES ON SILICON [J]. APPLIED PHYSICS LETTERS, 1976, 29 (08) : 494 - 496

[7] ROLE OF INTERFACIAL LAYER IN METAL-SEMICONDUCTOR SOLAR CELLS [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (03) : 1286 - 1289

[8] LAI SW, 1975, 11TH P IEEE PHOT SPE, P389

[9] OPERATION OF ITO-SI HETEROJUNCTION SOLAR-CELLS [J]. APPLIED PHYSICS LETTERS, 1976, 29 (10) : 682 - 684

[10] ELECTRICAL AND OPTICAL-PROPERTIES OF IN2O3-N-SI PHOTODIODES [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (01) : 199 - 200

[1] PHOTOCURRENT SUPPRESSION IN HETEROJUNCTION SOLAR CELLS [J]. APPLIED PHYSICS LETTERS, 1975, 27 (12) : 691 - 693

[2] [Anonymous], 1955, J APPL PHYS, DOI [10.1063/1.1722034, DOI 10.1063/1.1722034]

[3] Burk D. E., 1976, Twelfth IEEE Photovoltaic Specialists Conference 1976, P971

[4] CURRENT/VOLTAGE CHARACTERISTICS OF P-N GE-SI AND GE-GAAS HETEROJUNCTIONS [J]. PROCEEDINGS OF THE INSTITUTION OF ELECTRICAL ENGINEERS-LONDON, 1966, 113 (09): : 1468 - &

[5] CAPACITANCE OF P-N HETEROJUNCTIONS INCLUDING EFFECTS OF INTERFACE STATES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (02) : 63 - +

[6] EFFICIENT PHOTOVOLTAIC HETEROJUNCTIONS OF INDIUM TIN OXIDES ON SILICON [J]. APPLIED PHYSICS LETTERS, 1976, 29 (08) : 494 - 496

[7] ROLE OF INTERFACIAL LAYER IN METAL-SEMICONDUCTOR SOLAR CELLS [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (03) : 1286 - 1289

[8] LAI SW, 1975, 11TH P IEEE PHOT SPE, P389

[9] OPERATION OF ITO-SI HETEROJUNCTION SOLAR-CELLS [J]. APPLIED PHYSICS LETTERS, 1976, 29 (10) : 682 - 684

[10] ELECTRICAL AND OPTICAL-PROPERTIES OF IN2O3-N-SI PHOTODIODES [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (01) : 199 - 200