OPERATION OF ITO-SI HETEROJUNCTION SOLAR-CELLS

[1] PHOTOCURRENT SUPPRESSION IN HETEROJUNCTION SOLAR CELLS [J]. APPLIED PHYSICS LETTERS, 1975, 27 (12) : 691 - 693

[2] ANDERSON RL, NSFRANNSEAER7417631P

[3] STUDIES OF TUNNEL MOS DIODES .1. INTERFACE EFFECTS IN SILICON SCHOTTKY DIODES [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1971, 4 (10) : 1589 - +

[4] DUBOW JB, 1975, IEEE IEDM TECH DIG, P230

[5] PROPERTIES OF SN-DOPED IN2O3 FILMS PREPARED BY RF SPUTTERING [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (12) : 1719 - 1725

[6] HIGHLY CONDUCTIVE, TRANSPARENT FILMS OF SPUTTERED IN2-XSNXO3-Y [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (10) : 1368 - &

[7] MIZRAH T, 1976, THESIS MIT

[8] SZE SM, 1969, PHYSICS SEMICONDUCTO

[9] VAINSHTEIN VM, 1967, SOV PHYS SEMICOND+, V1, P104

[10] Wolf H. F, 1969, SILICON SEMICONDUCTO

[1] PHOTOCURRENT SUPPRESSION IN HETEROJUNCTION SOLAR CELLS [J]. APPLIED PHYSICS LETTERS, 1975, 27 (12) : 691 - 693

[2] ANDERSON RL, NSFRANNSEAER7417631P

[3] STUDIES OF TUNNEL MOS DIODES .1. INTERFACE EFFECTS IN SILICON SCHOTTKY DIODES [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1971, 4 (10) : 1589 - +

[4] DUBOW JB, 1975, IEEE IEDM TECH DIG, P230

[5] PROPERTIES OF SN-DOPED IN2O3 FILMS PREPARED BY RF SPUTTERING [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (12) : 1719 - 1725

[6] HIGHLY CONDUCTIVE, TRANSPARENT FILMS OF SPUTTERED IN2-XSNXO3-Y [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (10) : 1368 - &

[7] MIZRAH T, 1976, THESIS MIT

[8] SZE SM, 1969, PHYSICS SEMICONDUCTO

[9] VAINSHTEIN VM, 1967, SOV PHYS SEMICOND+, V1, P104

[10] Wolf H. F, 1969, SILICON SEMICONDUCTO