ROOM-TEMPERATURE NEGATIVE DIFFERENTIAL RESISTANCE OF METAL (COSI2) INSULATOR (CAF2) RESONANT TUNNELING DIODE

被引：17

作者：

SUEMASU, T

WATANABE, M

ASADA, M

SUZUKI, N

机构：

[1] Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro-ku, Tokyo 152

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 15期

关键词：

DIODES; TUNNEL DIODES; NEGATIVE RESISTANCE; SEMICONDUCTOR DEVICES AND MATERIALS;

D O I：

10.1049/el:19920911

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The first room temperature negative differential resistance in a nanometre-thick metal (CoSi2)/insulator (CaF2) resonant tunneling diode is reported. This device consists of heterostructures with two metallic (CoSi2) wells and three insulator (CaF2) barriers grown on n-Si(111) substrate. Peak-to-valley current ratios as high as 2 at 300K and 25 at 77K were obtained.

引用

页码：1432 / 1434

页数：3

共 6 条

[1] TUNNELING HOT-ELECTRON TRANSFER AMPLIFIERS (THETA) - AMPLIFIERS OPERATING UP TO THE INFRARED
HEIBLUM, M
[J]. SOLID-STATE ELECTRONICS, 1981, 24 (04) : 343 - 366
[2] TRANSISTOR ACTION OF METAL (COSI2) INSULATOR (CAF2) HOT-ELECTRON TRANSISTOR STRUCTURE
MURATAKE, S
WATANABE, M
SUEMASU, T
ASADA, M
[J]. ELECTRONICS LETTERS, 1992, 28 (11) : 1002 - 1004
[3] NOVEL TRIODE DEVICE USING METAL-INSULATOR SUPERLATTICE PROPOSED FOR HIGH-SPEED RESPONSE
NAKATA, Y
ASADA, M
SUEMATSU, Y
[J]. ELECTRONICS LETTERS, 1986, 22 (01) : 58 - 59
[4] SAKAGUCHI T, 1991, IEICE TRANS COMMUN, V74, P3326
[5] SUEMASU T, 1992, 50TH ANN DEV RES C
[6] WATANABE M, JPN J APPL PHYS, V31, pL116

← 1 →