OPTICAL SWITCHING IN THIN-FILM ELECTROLUMINESCENT DEVICES WITH INHERENT MEMORY CHARACTERISTICS

被引：11

作者：

SAHNI, O

HOWARD, WE

ALT, PM

机构：

来源：

关键词：

D O I：

10.1109/T-ED.1981.20367

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：459 / 465

页数：7

共 11 条

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HOWARD, WE
ALT, PM
[J]. APPLIED PHYSICS LETTERS, 1977, 31 (06) : 399 - 401
[2] MEMORY EFFECT OF ZNS-MN AC THIN-FILM ELECTROLUMINESCENCE
MARRELLO, V
RUHLE, W
ONTON, A
[J]. APPLIED PHYSICS LETTERS, 1977, 31 (07) : 452 - 454
[3] BEAM-INDUCED SWITCHING PHENOMENA IN ZNS - MN EL MEMORY DEVICES
SAHNI, O
HOWARD, WE
ALT, PM
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (11) : 1352 - 1352
[4] Suzuki C., 1977, 1977 SID International Symposium. (Digest of Technical Papers), P90
[5] Suzuki C., 1976, 1976 SID International Symposium. (Digest of technical papers), P52
[6] TAKEDA M, 1975, J JAPAN SOC APP PH S, V44, P103
[7] TAKEDA M, 1974, 6TH P C SOL STAT DEV
[8] ROLE OF CARRIER POLARIZATION IN MECHANISM OF ELECTROLUMINESCENCE OF ZNS-MN FILMS
VLASENKO, NA
ZYNIO, SA
[J]. PHYSICA STATUS SOLIDI, 1967, 20 (01): : 311 - &
[9] Yamauchi Y., 1974, 1974 International Electron Devices Meeting (IEDM), P352, DOI 10.1109/IEDM.1974.6219665
[10] MECHANISM OF INHERENT MEMORY IN THIN FILM-EL DEVICE
YOSHIDA, M
KAKIHARA, Y
YAMASHITA, T
TANIGUCHI, K
INOGUCHI, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 : 127 - 133