N-CHANNEL POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS USING AS-DEPOSITED POLYCRYSTALLINE SILICON AND ION DOPING

Polycrystalline silicon (poly-Si) thin film transistors (TFTs) were fabricated using as-deposited poly-Si and ion doping. The poly-Si was prepared by a remote plasma chemical vapour deposition at the substrate temperature of 280°C using a mixture gas of SiF4, SiH4, He, and H2. The n-channel poly-Si TFTs using as-deposited poly-Si and ion doping exhibited a field effect mobility of 12 cm2/Vs, a threshold voltage of 4 V, and a gate voltage swing of 1.80 V/decade.© 1995 American Institute of Physics.