EFFECTS OF TEMPERATURE AND ELECTRICAL STRESS ON THE PERFORMANCE OF THIN-FILM TRANSISTORS FABRICATED FROM UNDOPED LOW-PRESSURE CHEMICAL VAPOR-DEPOSITED POLYCRYSTALLINE SILICON

被引：32

作者：

DIMITRIADIS, CA ^{[1
]}

COXON, PA ^{[1
]}

机构：

[1] GEC RES LTD,HIRST RES CTR,WEMBLEY HA9 7PP,MIDDX,ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 07期

关键词：

D O I：

10.1063/1.100897

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：620 / 622

页数：3

共 22 条

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[7] DIELECTRIC-BREAKDOWN IN ELECTRICALLY STRESSED THIN-FILMS OF THERMAL SIO2
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[8] ELECTRON-SCATTERING IN SILICON INVERSION LAYERS BY OXIDE AND SURFACE-ROUGHNESS
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[J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (09) : 506 - 509

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