DEFECT STRUCTURE AND IRRADIATION BEHAVIOR OF NONCRYSTALLINE S102

[1] HYDRIDES AND HYDROXYLS IN THIN SILICON DIOXIDE FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (04) : 614 - &

[2] BELL T, 1962, PHYS CHEM GLASSES-B, V3, P141

[3] Bruckner R., 1971, Journal of Non-Crystalline Solids, V5, P177, DOI 10.1016/0022-3093(71)90032-9

[4] BRUCKNER R, 1971, J NONCRYST SOLIDS, V5, P123

[5] CHARLESBY A, 1960, ATOMIC RADIATION POL

[6] MODEL FOR RADIATION-INDUCED CHARGE TRAPPING AND ANNEALING IN OXIDE LAYER OF MOS DEVICES [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (12) : 4886 - +

[7] METAL-DEPENDENT INTERFACE STATES IN THIN MOS STRUCTURES [J]. APPLIED PHYSICS LETTERS, 1971, 18 (09) : 401 - +

[8] LINDMAYER J, 1965, PHYSICAL ELECTRONICS

[9] LINDMAYER J, 1968, IEEE T, VED15, P637

[10] MATHESON MS, 1964, RADIAT RES S4, P1

[1] HYDRIDES AND HYDROXYLS IN THIN SILICON DIOXIDE FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (04) : 614 - &

[2] BELL T, 1962, PHYS CHEM GLASSES-B, V3, P141

[3] Bruckner R., 1971, Journal of Non-Crystalline Solids, V5, P177, DOI 10.1016/0022-3093(71)90032-9

[4] BRUCKNER R, 1971, J NONCRYST SOLIDS, V5, P123

[5] CHARLESBY A, 1960, ATOMIC RADIATION POL

[6] MODEL FOR RADIATION-INDUCED CHARGE TRAPPING AND ANNEALING IN OXIDE LAYER OF MOS DEVICES [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (12) : 4886 - +

[7] METAL-DEPENDENT INTERFACE STATES IN THIN MOS STRUCTURES [J]. APPLIED PHYSICS LETTERS, 1971, 18 (09) : 401 - +

[8] LINDMAYER J, 1965, PHYSICAL ELECTRONICS

[9] LINDMAYER J, 1968, IEEE T, VED15, P637

[10] MATHESON MS, 1964, RADIAT RES S4, P1