DENSITY-OF-STATES DETERMINATION IN HYDROGENATED AMORPHOUS-SILICON OBTAINED FROM RICE HUSK

被引：7

作者：

NANDI, KC ^{[1
]}

BISWAS, AK ^{[1
]}

ACHARYA, HN ^{[1
]}

机构：

[1] INDIAN INST TECHNOL,DEPT MICROBIOL & PARASITOL,KHARAGPUR 721302,W BENGAL,INDIA

来源：

MATERIALS LETTERS | 1991年 / 12卷 / 03期

关键词：

D O I：

10.1016/0167-577X(91)90168-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Hydrogenated amorphous silicon (a-Si:H) was prepared at a temperature of 460-degrees-C by thermal chemical vapour deposition (CVD) of silanes, generated by acid hydrolysis of magnesium silicide obtained from rice husk. Density of states (DOS) were determined from the capacitance-voltage relationships of Au/a-Si: H Schottky barriers (SBs) near the Fermi level of undoped specimens and found to be 1.07 x 10(17) cm-3. The high value of DOS may be due to less incorporation of hydrogen into the material.

引用

页码：171 / 174

页数：4

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