Long wavelength InAs/InGaSb infrared detectors: Optimization of carrier lifetimes

被引：210

作者：

Grein, CH ^{[1
]}

Young, PM ^{[1
]}

Flatte, ME ^{[1
]}

Ehrenreich, H ^{[1
]}

机构：

[1] HARVARD UNIV,DIV APPL SCI,CAMBRIDGE,MA 02138

来源：

JOURNAL OF APPLIED PHYSICS | 1995年 / 78卷 / 12期

关键词：

D O I：

10.1063/1.360422

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The performance characteristics of type-II InAs/InxGa1-xSb superlattices for long and very long-wave infrared detection are discussed. This system promises benefits in this wavelength range over conventional technology based on Hg1-xCdxTe, in part because of suppressed band-to-band Auger recombination rates which lead to improved values of detectivity. The formalism for calculating Auger rates in superlattices is developed and the physical origin of Auger suppression in these systems is discussed. Accurate K . p band structures are used to obtain radiative, electron-electron, hole-hole, and band-to-band Auger rules, as well as shallow trap level assisted Auger recombination rates for photodiodes. Theoretical limits for high temperature operation of ideal photovoltaic detectors are presented and compared with HgCdTe. (C) 1995 American Institute of Physics.

引用

页码：7143 / 7152

页数：10

共 27 条

[1]

[Anonymous], 1991, SEMICONDUCTORS GROUP

[2] OVERLAP INTEGRALS FOR BLOCH ELECTRONS [J].