STUDY OF NEUTRAL UN-DISTORTED VACANCY IN SILICON

被引：24

作者：

LINDEFELT, U

机构：

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1978年 / 11卷 / 17期

关键词：

D O I：

10.1088/0022-3719/11/17/017

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：3651 / 3660

页数：10

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