CHARACTERIZATION OF MONOLITHIC N-TYPE 6H-SIC PIEZORESISTIVE SENSING ELEMENTS

被引：65

作者：

SHOR, JS

BEMIS, L

KURTZ, AD

机构：

[1] Kulite Semiconductor Products, Inc., Leonia NJ

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1994年 / 41卷 / 05期

基金：

美国国家航空航天局;

关键词：

D O I：

10.1109/16.285013

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Monolithic, junction isolated piezoresistors have been fabricated in commercially available 6H-SiC. The gauge factor (GF) of these elements has been measured up to 250-degrees-C in both longitudinal and transverse configurations. The maximum GF observed was -29.4, corresponding to the piezoresistive coefficient pi11. A beam transducer with a four-arm integral piezoresistor network was fabricated and tested in a force sensor configuration. The data indicate that n-type 6H-SiC has the potential to be useful in high temperature electromechanical sensors to measure parameters such as pressure, force, strain and acceleration.

引用

页码：661 / 665

页数：5

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