ELECTRONIC DENSITY OF STATES IN CHEMICALLY VAPOR-DEPOSITED AMORPHOUS SILICON

被引：5

作者：

NAKASHITA, T

HIROSE, M

OSAKA, Y

机构：

[1] Department of Electrical Engineering, Faculty of Engineering, Hiroshima University

来源：

关键词：

D O I：

10.1143/JJAP.18.405

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

[No abstract available]

引用

页码：405 / 406

页数：2

共 12 条

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[J]. APPLIED PHYSICS LETTERS, 1977, 30 (11) : 561 - 563
[2] AMORPHOUS SILICON SOLAR-CELL
CARLSON, DE
WRONSKI, CR
[J]. APPLIED PHYSICS LETTERS, 1976, 28 (11) : 671 - 673
[3] FRITZCHE H, 1977, 7TH P INT C AM LIQ S
[4] NOTE ON LOCALIZED STATES IN AMORPHOUS-GERMANIUM
HIROSE, M
TANIGUCHI, M
OSAKA, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (01) : 175 - 176
[5] HIROSE M, UNPUBLISHED
[6] HIROSE M, 1977, 7TH P INT C AM LIQ S
[7] KNIGHTS JC, 1979, JPN J APPL PHYS, V18
[8] LECOMBER PG, 1972, ELECTRICAL STRUCTUAL, P373
[9] LOCALIZED STATES IN AMORPHOUS AND POLYCRYSTALLIZED SI
NAKASHITA, T
HIROSE, M
OSAKA, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (06) : 985 - 991
[10] Spear W. E., 1972, Journal of Non-Crystalline Solids, V8-10, P727, DOI 10.1016/0022-3093(72)90220-7