PHOTOTHERMAL SUBGAP SPECTRA OF DOPED SILICON-WAFERS

被引：4

作者：

AMATO, G ^{[1
]}

BENEDETTO, G ^{[1
]}

BOARINO, L ^{[1
]}

SPAGNOLO, R ^{[1
]}

TURNATURI, M ^{[1
]}

机构：

[1] IRCI,TURIN 10071,ITALY

来源：

MATERIALS LETTERS | 1991年 / 12卷 / 04期

关键词：

D O I：

10.1016/0167-577X(91)90009-U

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Subgap absorption spectra of doped silicon wafers are determined. The spectra are characterized through the values of the exponential tail and optical gap. The free carrier contribution is also evidenced and good agreement with theory is shown at high dopant concentrations. In lightly doped samples, a non-negligible contribution to the absorption is attributed to optically active defects. The difference between optically and electrically active defects is assumed to be due to different kinds of impurities.

引用

页码：257 / 260

页数：4

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