THE PHOTODISSOLUTION OF INP

被引：22

作者：

PREUSSER, S ^{[1
]}

HERLEM, M ^{[1
]}

ETCHEBERRY, A ^{[1
]}

JAUME, J ^{[1
]}

机构：

[1] CNRS,ELECTROCHIM INTERFACIALE LAB,1 PL A BRIAND,F-92195 MEUDON,FRANCE

来源：

ELECTROCHIMICA ACTA | 1992年 / 37卷 / 02期

关键词：

PHOTOELECTROCHEMISTRY; INDIUM PHOSPHIDE; PHOTODISSOLUTION; PHOTODECOMPOSITION; MECHANISM; OXIDATION;

D O I：

10.1016/0013-4686(92)85015-D

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The linear dependency of the n-InP photocurrent on the level of illumination is independent of the solution composition, the type of illumination, the exposed crystalline face, or the level of doping. The photodissolution mechanism (for photocurrents between 1.1 and 65 mA cm-2) utilizes six charges to dissolve one molecule. In the absence of an insoluble oxide layer, the ratio between photogenerated holes and injected electrons is independent of the exposed crystalline face, the photon flux, the solution composition and the level of doping. Solutions containing oxygen bearing mineral anions (such as ClO4-, H2PO2-, or SO42-) are predisposed to the formation of an insoluble oxide layer on the surface of InP under strong illumination.

引用

页码：289 / 295

页数：7

共 16 条

[1] GROWTH AND DISSOLUTION OF THIN ANODIC LAYERS ON GAAS - A PHOTOELECTROCHEMICAL STUDY [J].

DECKER, F .

ELECTROCHIMICA ACTA, 1985, 30 (03) :301-304

[2]

ERUSALIMCHIK IG, 1980, ELEKTROKHYMIYA, V16, P1854

[3] ELECTRON-EXCITATION DURING ANODIC DECOMPOSITION OF III-V COMPOUNDS INDUCED BY HOLE INJECTING SPECIES (CE-4+) [J].

ETCHEBERRY, A ;

GAUTRON, J ;

KHOUMRI, EM ;

SCULFORT, JL .

JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 1990, 283 (1-2) :177-186

[4] A STUDY OF THE MECHANISMS OF O-2 REDUCTION AT N-INP AND P-INP IN ACID AQUEOUS-ELECTROLYTE [J].

ETCHEBERRY, A ;

GAUTRON, J ;

SCULFORT, JL .

JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 1988, 247 (1-2) :265-276

[5] CHARGE-TRANSFER KINETICS AT AN INDIUM-PHOSPHIDE SEMICONDUCTOR ELECTRODE - HOLE INJECTION PROCESS IN THE PRESENCE OF THE CE-4+/CE-3+ COUPLE [J].

ETCHEBERRY, A ;

FOTOUHI, B ;

GAUTRON, J ;

PELLETIER, S ;

SCULFORT, JL .

JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 1989, 269 (02) :351-359

[6] UBER DEN MECHANISMUS DER ANODISCHEN AUFLOSUNG VON GALLIUMARSENID [J].

GERISCHER, H .

BERICHTE DER BUNSEN-GESELLSCHAFT FUR PHYSIKALISCHE CHEMIE, 1965, 69 (07) :578-+

[7]

Greenwood N. N., 1986, CHEM ELEMENTS, P590

[8] ANODIC FILM FORMATION ON ILLUMINATED N-GAAS ELECTRODES STUDIED BY TIME-RESOLVED PHOTOELECTROCHEMISTRY [J].

GRUSZECKI, T ;

ERIKSSON, S ;

HOLMSTROM, B .

JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 1989, 274 (1-2) :117-122

[9]

HOLLINGER G, 1988, J MICROSC SPECT ELEC, V13, P31

[10] ON THE NATURE OF OXIDES ON INP-SURFACES [J].

HOLLINGER, G ;

BERGIGNAT, E ;

JOSEPH, J ;

ROBACH, Y .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (06) :2082-2088

← 1 2 →