CD AND TE DESORPTION FROM (001), (111)B, AND (110) CDTE SURFACES

被引:38
作者
TATARENKO, S
DAUDIN, B
BRUN, D
ETGENS, VH
VERON, MB
机构
[1] CEA,DEPT RECH FONDAMENTALE MAT CONDENSEE,SPMM,LPI,F-38054 GRENOBLE 9,FRANCE
[2] EUROPEAN SYNCHROTRON RADIAT FACIL,F-38043 GRENOBLE,FRANCE
[3] LAB MINERAL CRISTALLOG,F-75005 PARIS,FRANCE
[4] LAB UTILISAT RAYONNEMENT ELECTROMAGNET,F-91405 ORSAY,FRANCE
来源
PHYSICAL REVIEW B | 1994年 / 50卷 / 24期
关键词
D O I
10.1103/PhysRevB.50.18479
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The Cd and Te desorption from (001), (110), and (111)B CdTe surfaces have been studied as a function of temperature by measuring the electron beam current reflected from these surfaces. For Te, activation energies of 0.96, 1.23, and 2.04 0.10 eV have been found for (001), (110), and (111)B surface orientation, respectively. For Cd, activation energies of 1.9 0.1 and 1.96 0.10 eV are measured for the (111)B and the (001) CdTe surfaces, respectively, similar to the measured values of activation energy for the sublimation of these surfaces. A detailed analysis of the desorption process gives some enlightenment concerning two remarkable phenomena, namely, (i) a reversible transformation between a c(2×2)+(2×1) and a (2×1) reconstruction for (001) CdTe and (ii) a hysteresis cycle between a (1×1) and a c(8×4) surface for the (111)B CdTe. © 1994 The American Physical Society.
引用
收藏
页码:18479 / 18488
页数:10
相关论文
共 19 条
[1]   THE 1ST OBSERVATION OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS DURING THE GROWTH AND SUBLIMATION OF CDTE [J].
ARIAS, JM ;
SULLIVAN, G .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (05) :3143-3146
[2]   SURFACE STOICHIOMETRY AND REACTION-KINETICS OF MOLECULAR-BEAM EPITAXIALLY GROWN (001) CDTE SURFACES [J].
BENSON, JD ;
WAGNER, BK ;
TORABI, A ;
SUMMERS, CJ .
APPLIED PHYSICS LETTERS, 1986, 49 (16) :1034-1036
[3]   ZNSE(100) SURFACE - ATOMIC CONFIGURATIONS, COMPOSITION, AND SURFACE DIPOLE [J].
CHEN, W ;
KAHN, A ;
SOUKIASSIAN, P ;
MANGAT, PS ;
GAINES, J ;
PONZONI, C ;
OLEGO, D .
PHYSICAL REVIEW B, 1994, 49 (15) :10790-10793
[4]   SURFACE STOICHIOMETRY VARIATION ASSOCIATED WITH GAAS (001) RECONSTRUCTION TRANSITIONS [J].
DEPARIS, C ;
MASSIES, J .
JOURNAL OF CRYSTAL GROWTH, 1991, 108 (1-2) :157-172
[5]   (111)CDTE SURFACE-STRUCTURE - A STUDY BY REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION, X-RAY PHOTOELECTRON-SPECTROSCOPY, AND X-RAY PHOTOELECTRON DIFFRACTION [J].
DUSZAK, R ;
TATARENKO, S ;
CIBERT, J ;
SAMINADAYAR, K ;
DESHAYES, C .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1991, 9 (06) :3025-3030
[6]   STUDY OF CDTE(111) SURFACE RECONSTRUCTIONS BY RHEED AND XPS [J].
DUSZAK, R ;
TATARENKO, S ;
CIBERT, J ;
MAGNEA, N ;
MARIETTE, H ;
SAMINADAYAR, K .
SURFACE SCIENCE, 1991, 251 :511-515
[7]  
ETGENS VH, 1994, 4TH INT C FORM SEM I, P67
[8]  
FASHINGER W, 1988, APPL PHYS LETT, V53, P2519
[9]  
FASHINGER W, 1990, J CRYST GROWTH, V99, P566
[10]   INVESTIGATIONS OF THE SB/CDTE(100)-(2X1) INTERFACIAL STRUCTURE WITH PHOTOEMISSION [J].
JOHN, P ;
LEIBSLE, FM ;
MILLER, T ;
HSIEH, TC ;
CHIANG, TC .
SUPERLATTICES AND MICROSTRUCTURES, 1987, 3 (04) :347-355