FAR-INFRARED 2-PHOTON TRANSITIONS IN N-GAAS

被引：23

作者：

BOHM, W

ETTLINGER, E

PRETTL, W

机构：

来源：

PHYSICAL REVIEW LETTERS | 1981年 / 47卷 / 17期

关键词：

D O I：

10.1103/PhysRevLett.47.1198

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1198 / 1201

页数：4

共 9 条

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[2]

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[6] PRECISION VERIFICATION OF EFFECTIVE MASS THEORY FOR SHALLOW DONORS IN GAAS [J].

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[7]

STILLMAN GE, 1977, SEMICONDUCT SEMIMET, V12, P169

[8] QUANTUM RESONANCES IN THE VALENCE BANDS OF ZINCBLENDE SEMICONDUCTORS .1. THEORETICAL ASPECTS [J].

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[9]

Zawadzki W., 1980, Narrow Gap Semiconductors, Physics and Applications. Proceedings of the International Summer School on Narrow Gap Semiconductors, Physics and Applications, P85

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