ZN-DIFFUSED IN0.53GA0.47AS-INP AVALANCHE PHOTODETECTOR

被引：41

作者：

MATSUSHIMA, Y

SAKAI, K

AKIBA, S

YAMAMOTO, T

机构：

[1] KDD Research and Development Laboratories, Nakameguro, Meguro-ku

来源：

APPLIED PHYSICS LETTERS | 1979年 / 35卷 / 06期

关键词：

D O I：

10.1063/1.91171

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Mesa In0.53Ga0.47As avalanche photodetectors were successfully fabricated by liquid-phase-epitaxial growth on (100) -InP substrate and Zn-diffusion technique. An avalanche multiplication M as high as 32 was measured under broad-area illumination provided by a cw InGaAsP laser at 1.3 μm. Distribution of M was measured by an electron-beam-induced current image of a scanning electron microscope, and uniform multiplication profiles were observed up to M=3 and M=12 at the mesa diameter of 300 and 150 μm, respectively.

引用

页码：466 / 468

页数：3