RAPID THERMAL CHEMICAL VAPOR-DEPOSITION OF SIOXNY FILMS

被引：12

作者：

LEBLAND, F ^{[1
]}

LICOPPE, C ^{[1
]}

GAO, Y ^{[1
]}

NISSIM, YI ^{[1
]}

RIGO, S ^{[1
]}

机构：

[1] UNIV PARIS 07,PHYS SOLIDES GRP,F-75251 PARIS 05,FRANCE

来源：

APPLIED SURFACE SCIENCE | 1992年 / 54卷

关键词：

D O I：

10.1016/0169-4332(92)90031-R

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Rapid thermal CVD was utilized to deposit SiOxNy layers on III-V materials. The deposition rate and the stoichiometry of the films are controlled by the N2O partial pressure and the temperature. Deposition rates as high as 100 angstrom/s can be obtained at 750-degrees-C for which the InP substrate is not degraded. The use of N2O as an adjustable reactant gas allows us to control the stoichiometry of the film by varying the O concentration while the Si and N concentration remain unchanged. This effect may be explained by the dissociation of nitrogen protoxide into oxygen which is directly incorporated in the films and nitrogen in excess in the reaction chamber which increase the dilution. The use of nitrogen protoxide has allowed us to obtain continuously all compositions between SiO2 and Si3N4 with indexes of refraction varying between 1.45 and 2.2. Applications to guiding devices are discussed.

引用

页码：125 / 129

页数：5