PHOTO-ASSISTED DEPOSITION OF THIN-FILMS ON III-V SEMICONDUCTORS WITH UV AND IR LAMPS

被引：21

作者：

NISSIM, YI

MOISON, JM

HOUZAY, F

LEBLAND, F

LICOPPE, C

BENSOUSSAN, M

机构：

[1] Centre National d'Etudes des Télécommunications, Laboratoire de Bagneux, Unité Associée au CNRS UA 250, 92220 Bagneux

来源：

APPLIED SURFACE SCIENCE | 1990年 / 46卷 / 1-4期

关键词：

D O I：

10.1016/0169-4332(90)90139-Q

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

New chemical vapour deposition (CVD) processes controlled by light irradiation are studied and applied to III-V semiconductor device technology. The interactions between the incident photons and the gas-substrate system are either photolytic (UV lamps) or pyrolytic (IR lamps). In the first case the process is cold and in the second one it produces fast thermal ramping. The technique is thus compatible in both cases with the fragile semiconductor substrate and it allows in-situ processing. We report here a set of results involving surface and interface studies in order to prepare the deposition of thin-film materials, thin dielectric film deposition using "flash" CVD or UVCVD, and the first attempts to deposit semiconductors and metals using the same "flash" CVD techniques. the aim of this work is to propose alternative technologies for III-V semiconductors. © 1990.

引用

页码：175 / 188

页数：14

共 24 条

[1] KINETICS ASPECTS OF TISI2 DEPOSITION WITHOUT SILICON CONSUMPTION [J].

BENSAHEL, D ;

REGOLINI, JL ;

MERCIER, J .

APPLIED PHYSICS LETTERS, 1989, 55 (15) :1549-1551

[2] HYDROGEN VIBRATION ON SI(111)7X7 - EVIDENCE FOR A UNIQUE CHEMISORPTION SITE [J].

CHABAL, YJ .

PHYSICAL REVIEW LETTERS, 1983, 50 (23) :1850-1853

[3] EFFECT OF INSITU AND EXSITU ANNEALING ON DISLOCATIONS IN GAAS ON SI SUBSTRATES [J].

CHOI, C ;

OTSUKA, N ;

MUNNS, G ;

HOUDRE, R ;

MORKOC, H ;

ZHANG, SL ;

LEVI, D ;

KLEIN, MV .

APPLIED PHYSICS LETTERS, 1987, 50 (15) :992-994

[4] CHARACTERIZATION OF PLASMA SILICON-NITRIDE LAYERS [J].

CLAASSEN, WAP ;

VALKENBURG, WGJN ;

HABRAKEN, FHPM ;

TAMMINGA, Y .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (12) :2419-2423

[5]

HIMPSEL FJ, 1988, PHYS REV B, V38, P664

[6] THERMAL AND PHOTON-ASSISTED INTERACTION OF AMMONIA, SILANE AND OXYGEN WITH INDIUM-PHOSPHIDE SUBSTRATES [J].

HOUZAY, F ;

MOISON, JM ;

LICOPPE, C ;

NISSIM, YI .

VACUUM, 1990, 41 (1-3) :718-719

[7]

HOUZAY F, 1990, 5TH UK PHOT PROC WOR

[8] QUANTITATIVE-ANALYSIS OF THE EFFECT OF DISORDER-INDUCED MODE-COUPLING ON INFRARED-ABSORPTION IN SILICA [J].

KIRK, CT .

PHYSICAL REVIEW B, 1988, 38 (02) :1255-1273

[9] AN UHV STUDY OF THE 1ST STAGES OF THE GROWTH OF SIO2/INP MIS STRUCTURES WITH OXYGEN AND SILANE VECTOR GASES [J].

LICOPPE, C ;

MOISON, JM .

SURFACE SCIENCE, 1989, 211 (1-3) :979-985

[10] SURFACE-REACTIONS OF SILANE WITH OXIDIZED INP AND THEIR APPLICATION TO THE IMPROVEMENT OF CHEMICAL VAPOR-DEPOSITION GROWN, INP-BASED METAL-INSULATOR-SEMICONDUCTOR DEVICES [J].

LICOPPE, C ;

MOISON, JM ;

NISSIM, YI ;

REGOLINI, JL ;

BENSAHEL, D .

APPLIED PHYSICS LETTERS, 1988, 53 (14) :1291-1293

← 1 2 3 →