SURFACE-REACTIONS OF SILANE WITH OXIDIZED INP AND THEIR APPLICATION TO THE IMPROVEMENT OF CHEMICAL VAPOR-DEPOSITION GROWN, INP-BASED METAL-INSULATOR-SEMICONDUCTOR DEVICES

被引:15
作者
LICOPPE, C [1 ]
MOISON, JM [1 ]
NISSIM, YI [1 ]
REGOLINI, JL [1 ]
BENSAHEL, D [1 ]
机构
[1] CTR NATL ETUD TELECOMMUN,F-38243 MEYLAN,FRANCE
关键词
D O I
10.1063/1.100426
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
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页码:1291 / 1293
页数:3
相关论文
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