ANALYSIS OF NATIVE OXIDE-FILMS AND OXIDE SUBSTRATE REACTIONS ON III-V-SEMICONDUCTORS USING THERMOCHEMICAL PHASE-DIAGRAMS

被引：109

作者：

SCHWARTZ, GP

机构：

来源：

THIN SOLID FILMS | 1983年 / 103卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(83)90420-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3 / 16

页数：14

共 29 条

[1] GAAS OXIDATION AND THE GA-AS-O EQUILIBRIUM PHASE-DIAGRAM - REPLY
BELYI, VI
GOLUBENKO, AN
SMIRNOVA, TP
LELKIN, KP
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (06) : 1386 - 1387
[2] EZHOVA ZA, 1976, RUSS J INORG CHEM, V21, P212
[3] LOCAL ATOMIC AND ELECTRONIC-STRUCTURE OF OXIDE-GAAS AND SIO2-SI INTERFACES USING HIGH-RESOLUTION XPS
GRUNTHANER, FJ
GRUNTHANER, PJ
VASQUEZ, RP
LEWIS, BF
MASERJIAN, J
MADHUKAR, A
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1443 - 1453
[4] X-RAY PHOTOEMISSION STUDY OF OXIDATION PROCESS AT CLEAVED (110) SURFACES OF GAAS, GAP AND INSB
IWASAKI, H
MIZOKAWA, Y
NISHITANI, R
NAKAMURA, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (11) : 1925 - 1933
[5] IWASAKI H, 1978, JPN J APPL PHYS, V17, P321
[6] STUDIES ON ARSENIC TETROXIDE .2. THE COMBUSTION OF ARSENIC IN OXYGEN UNDER PRESSURE
LONG, LH
SACKMAN, JF
[J]. JOURNAL OF INORGANIC & NUCLEAR CHEMISTRY, 1963, 25 (01): : 87 - &
[7] STUDIES ON ARSENIC TETROXIDE .3. DETERMINATION OF THE HEAT OF FORMATION
LONG, LH
SACKMAN, JF
[J]. JOURNAL OF INORGANIC & NUCLEAR CHEMISTRY, 1963, 25 (01): : 93 - 98
[8] STUDIES ON ARSENIC TETROXIDE .1. THE INTERACTION OF ARSENIC TRIOXIDE AND ARSENIC PENTOXIDE
LONG, LH
SACKMAN, JF
[J]. JOURNAL OF INORGANIC & NUCLEAR CHEMISTRY, 1963, 25 (01): : 79 - 86
[9] OXIDE-FILMS ON A(III)B(V) SEMICONDUCTORS
LOSCHKE, K
KUHN, G
BILZ, HJ
LEONHARDT, G
[J]. THIN SOLID FILMS, 1978, 48 (02) : 229 - 236
[10] ELECTRICAL-PROPERTIES OF SIO2 AND SI3N4 DIELECTRIC LAYERS ON INP
MEINERS, LG
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 373 - 379

← 1 2 3 →