OXIDE-FILMS ON A(III)B(V) SEMICONDUCTORS

被引:19
作者
LOSCHKE, K
KUHN, G
BILZ, HJ
LEONHARDT, G
机构
关键词
D O I
10.1016/0040-6090(78)90244-4
中图分类号
T [工业技术];
学科分类号
08 ;
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页码:229 / 236
页数:8
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共 14 条
[1]  
BILZ H, UNPUBLISHED
[2]   ELECTRON-SPECTROSCOPY FOR CHEMICAL-ANALYSIS [J].
HERCULES, DM .
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1974, 5 (NOV-D) :811-826
[3]   THERMAL OXIDE LAYERS ON INDIUM-ANTIMONIDE [J].
KORWINPAWLOWSKI, ML ;
HEASELL, EL .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 27 (02) :339-346
[4]   ESCA STUDIES OF SOME A-IIIB-V COMPOUNDS WITH GA AND AS [J].
LEONHARDT, G ;
BERNDTSSON, A ;
HEDMAN, J ;
KLASSON, M ;
NILSSON, R ;
NORDLING, C .
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1973, 60 (01) :241-248
[5]  
LOSCHKE K, UNPUBLISHED
[6]  
LOSCHKE K, 1975, KRIST TECH, V10, pK45
[7]   INTERPRETATION OF ELLIPSOMETRIC STUDIES ON GAP (110) SINGLE-CRYSTALS [J].
LUKES, F .
SURFACE SCIENCE, 1975, 49 (01) :344-348
[8]   OXIDATION OF SI AND GAAS IN AIR AT ROOM-TEMPERATURE [J].
LUKES, F .
SURFACE SCIENCE, 1972, 30 (01) :91-&
[9]   ELLIPSOMETRIC STUDIES OF CHEMISORPTION ON GAP(110) SINGLE-CRYSTALS [J].
MORGAN, AE .
SURFACE SCIENCE, 1974, 43 (01) :150-172
[10]   THERMAL OXIDATION OF GAAS [J].
MURARKA, SP .
APPLIED PHYSICS LETTERS, 1975, 26 (04) :180-181