THE INFLUENCE OF OXIDATION AND ANNEALING ON INP NATIVE CHEMICAL OXIDES

被引:7
作者
KOROTCHENKOV, GS
MIKHAILOV, VA
TSVITSINSKY, VI
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 04期
关键词
D O I
10.1116/1.583026
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:981 / 984
页数:4
相关论文
共 15 条
[1]  
BUZANEVA EV, 1983, SURF PHYS CHEM MECH, V2, P85
[2]  
COGAN D, 1982, THIN SOLID FILMS, V91, P277
[3]  
GRIGOROVICH SL, 1981, ELECTRON TECHNOL MAT, P52
[5]  
KOROTCHENKOV GS, 1983, ELECTRON TECHNOL HF, P12
[6]  
KOROTCHENKOV GS, 1982, ELECTRON TECHNOL MAT, P22
[7]   OXIDE-FILMS ON A(III)B(V) SEMICONDUCTORS [J].
LOSCHKE, K ;
KUHN, G ;
BILZ, HJ ;
LEONHARDT, G .
THIN SOLID FILMS, 1978, 48 (02) :229-236
[8]   OXIDATION OF (N)-INP BY NITRIC-ACID [J].
MICHEL, C ;
EHRHARDT, JJ .
ELECTRONICS LETTERS, 1982, 18 (07) :305-307
[9]   THE IN-P-O PHASE-DIAGRAM - CONSTRUCTION AND APPLICATIONS [J].
SCHWARTZ, GP ;
SUNDER, WA ;
GRIFFITHS, JE .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (06) :1361-1367
[10]   ION-BEAM INDUCED COMPOSITION CHANGES DURING AUGER SPUTTER PROFILING OF THIN AL FILMS ON INP [J].
SKINNER, DK ;
SWANSON, JG ;
HAYNES, CV .
SURFACE AND INTERFACE ANALYSIS, 1983, 5 (01) :38-42