OXIDATION OF (N)-INP BY NITRIC-ACID

被引：9

作者：

MICHEL, C ^{[1
]}

EHRHARDT, JJ ^{[1
]}

机构：

[1] CNRS,MAURICE LETORT LAB,F-54600 VILLERS NANCY,FRANCE

来源：

ELECTRONICS LETTERS | 1982年 / 18卷 / 07期

关键词：

D O I：

10.1049/el:19820208

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：305 / 307

页数：3

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[5] EXPERIMENTAL-STUDY AND ELECTRICAL MODEL OF MIS N-INP STRUCTURES PREPARED BY OXIDATION IN ACID-MEDIUM
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[6] LOW LEAKAGE NEARLY IDEAL SCHOTTKY BARRIERS TO N-INP
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[7] AUGER ANALYSIS OF ANODIC OXIDE INP INTERFACE
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